Published by Patrick Mutisya · 14 days ago
Objective: Understand the quantum‑mechanical basis of rectification and how smoothing converts a pulsating DC into a near‑steady DC.
Rectification relies on the asymmetric conduction of charge carriers across a p‑n junction. The behaviour is explained by the band theory of semiconductors:
The current–voltage relationship of an ideal diode is given by the Shockley equation:
\$I = I_S\!\left(e^{\frac{qV}{kT}} - 1\right)\$
where \$I_S\$ is the saturation current, \$q\$ the elementary charge, \$k\$ Boltzmann’s constant and \$T\$ the absolute temperature.
Key parameters that affect rectifier performance:
| Rectifier type | Configuration | Peak inverse voltage (PIV) | Typical applications |
|---|---|---|---|
| Half‑wave | Single diode in series with load | \$V_{peak}\$ | Low‑power signal detection |
| Full‑wave centre‑tapped | Two diodes with centre‑tapped transformer | \$2V_{peak}\$ | Audio power supplies |
| Full‑wave bridge (Graetz) | Four diodes in bridge configuration | \$2V_{peak}\$ | General DC power supplies |
After rectification the output is a pulsating DC. Smoothing reduces the ripple to produce a near‑constant voltage. The most common method uses a filter capacitor placed across the load.
The ripple voltage \$V_r\$ for a full‑wave rectifier feeding a capacitor \$C\$ is approximated by:
\$Vr \approx \frac{I{load}}{f C}\$
where \$I_{load}\$ is the load current and \$f\$ the ripple frequency (twice the mains frequency for full‑wave).
The ripple factor \$r\$ quantifies the quality of smoothing:
\$r = \frac{V{r(rms)}}{V{DC}}\$
A lower \$r\$ indicates a smoother DC. Typical design targets are \$r < 0.05\$ for precision electronics.
Design a smoothing capacitor for a 12 V RMS, 50 Hz mains supply using a full‑wave bridge. The load draws \$I_{load}=0.5\,\$A and a ripple factor \$r\le0.02\$ is required.
\$C \ge \frac{I{load}}{f Vr}= \frac{0.5}{100 \times 0.24}=0.0208\;\text{F}\approx 22\,000\;\mu\text{F}\$
Thus a standard electrolytic capacitor of \$22\,000\;\mu\text{F}\$ (or larger) rated at ≥ 35 V will meet the specification.
| Concept | Quantum origin | Practical implication |
|---|---|---|
| Diode forward conduction | Band‑gap reduction under forward bias; carrier diffusion | Defines \$V_F\$ and maximum forward current |
| Reverse blocking | Depletion region widens, creating a potential barrier | Determines PI \cdot and leakage current |
| Ripple reduction | Capacitor stores charge during peaks, releases during troughs | Ripple voltage \$V_r\$ inversely proportional to \$C\$ and \$f\$ |