Describe the giant covalent structure of silicon(IV) oxide, $mathrm{SiO}_2$

Atoms, Elements and Compounds – Giant Covalent (Network) Solids

Objective

To describe the giant covalent (network) structures of silicon(IV) oxide (SiO₂), diamond and graphite, and to relate these structures to their characteristic physical properties as required by the Cambridge IGCSE Chemistry (0620) syllabus.

1. What is a Giant Covalent (Network) Solid?

  • Atoms are linked by strong covalent bonds that extend continuously in three dimensions (or, for graphite, in two‑dimensional layers).
  • The entire crystal behaves as one giant molecule; there are no discrete molecules.
  • Typical properties: very high melting point, great hardness, brittleness (except graphite), electrical insulation (diamond, SiO₂) or conductivity (graphite), low solubility, and transparency (SiO₂, diamond).

2. Silicon(IV) Oxide – SiO₂

2.1 Structural Description

  • Each silicon atom is tetrahedrally coordinated to four oxygen atoms.
  • Each oxygen atom is two‑coordinate, acting as a bridge between two silicon atoms (Si–O–Si).
  • The basic unit is a SiO₄ tetrahedron; tetrahedra share **corner** oxygen atoms to give an endless 3‑D framework.
Corner‑sharing SiO₄ tetrahedra forming a three‑dimensional SiO₂ network
Figure 1: Corner‑sharing SiO₄ tetrahedra in the giant covalent network of SiO₂ (quartz).

2.2 Bonding Details

  • Si–O bonds are strong covalent bonds (bond energy ≈ 452 kJ mol⁻¹) with considerable polarity (Si δ⁺, O δ⁻) but no free ions.
  • Each Si atom forms four σ‑bonds; each O atom forms two σ‑bonds.
  • The Si–O–Si bond angle in quartz is about 144°, giving the network a relatively open structure.

2.3 Quantitative Data

Parameter Typical Value Relevance to Properties
Si–O bond energy ≈ 452 kJ mol⁻¹ Very strong bonds → high melting point
Si–O–Si bond angle (quartz) ≈ 144° Controls network openness and density
O–Si–O tetrahedral angle ≈ 109.5° Defines geometry of each SiO₄ unit
Melting point ≈ 1710 °C Many Si–O bonds must be broken simultaneously
Density (crystalline quartz) ≈ 2.65 g cm⁻³ Result of the tightly packed tetrahedral network
Band gap ≈ 9 eV Explains transparency and insulating behaviour

2.4 Physical Properties Linked to Structure

  1. Very high melting point (≈ 1710 °C) – breaking a large number of strong Si–O covalent bonds.
  2. Hard and brittle – the rigid 3‑D network resists deformation; fracture occurs before bonds can slip.
  3. Electrical insulator – electrons are localised in covalent bonds; no free charge carriers.
  4. Transparent to visible light – a wide band gap (~9 eV) prevents absorption of visible photons.
  5. Low solubility in water – disruption of the extensive Si–O network requires more energy than water can provide.

3. Diamond (Carbon)

3.1 Structural Description

  • Each carbon atom is tetrahedrally bonded to four other carbon atoms.
  • The tetrahedra share **all** corners, producing a 3‑D network identical in geometry to the SiO₂ framework but without oxygen.
3‑D tetrahedral network of carbon atoms in diamond
Figure 2: 3‑D tetrahedral network of carbon atoms in diamond.

3.2 Bonding Details

  • C–C single bonds are covalent with a bond energy of about 347 kJ mol⁻¹.
  • All four bonds are equivalent (sp³ hybridisation).

3.3 Physical Properties and Structural Origin

  1. Highest known hardness – each carbon is locked in a rigid 3‑D lattice.
  2. Very high melting point (≈ 3550 °C) – many strong C–C bonds must be broken.
  3. Electrical insulator – no free electrons; large band gap (~5.5 eV).
  4. Transparent and high refractive index – wide band gap allows transmission of visible light.

4. Graphite (Carbon)

4.1 Structural Description

  • Each carbon atom is bonded to three others in a planar hexagonal sheet (sp² hybridisation).
  • Sheets are stacked; adjacent sheets are held together by weak van der Waals forces.
  • Within a sheet each carbon forms three σ‑bonds and retains one delocalised π‑electron.
Layered structure of graphite showing hexagonal sheets and weak interlayer forces
Figure 3: Layered (2‑D) network of graphite; strong covalent bonds in sheets, weak forces between sheets.

4.2 Bonding Details

  • In‑plane C–C σ‑bond energy ≈ 347 kJ mol⁻¹ (as in diamond).
  • Delocalised π‑electrons give each layer metallic‑like conductivity.

4.3 Physical Properties and Structural Origin

  1. Good electrical conductor (parallel to sheets) – mobile π‑electrons.
  2. Soft and lubricating – weak interlayer van der Waals forces allow layers to slide.
  3. High melting point (≈ 3600 °C) for the sheets – strong covalent bonds within each sheet.
  4. Opaque, black appearance – broad absorption due to π‑electron transitions.

5. Comparison of Giant Covalent Solids

Substance Basic Unit Network Type Key Physical Properties
SiO₂ (quartz) SiO₄ tetrahedron 3‑D corner‑sharing network MP ≈ 1710 °C; hard, brittle; electrical insulator; transparent; low solubility
Diamond (C) C atom (sp³) 3‑D tetrahedral network MP ≈ 3550 °C; hardest natural material; insulating; transparent; high refractive index
Graphite (C) C atom (sp²) in hexagonal sheet 2‑D layered sheets with weak interlayer forces Conductive parallel to sheets; soft, lubricating; high in‑plane MP; opaque, black
Al₂O₃ (corundum) AlO₆ octahedron 3‑D edge‑sharing network MP ≈ 2072 °C; very hard; insulating; high density

6. Summary

Giant covalent solids are characterised by extensive networks of strong covalent bonds. In SiO₂ the network consists of corner‑sharing SiO₄ tetrahedra, giving rise to a very high melting point, hardness, brittleness, insulating behaviour, transparency and low solubility. Diamond shares the same tetrahedral geometry but with C–C bonds, resulting in extreme hardness and a high melting point. Graphite, by contrast, forms planar sheets of sp²‑bonded carbon; the weak forces between sheets make it soft and a good conductor along the layers. Understanding these structural differences enables students to predict and explain the physical properties required by the Cambridge IGCSE Chemistry syllabus.

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